“Infineon has a strong track record in launching break-through technologies
aimed at markets requiring highly efficient power management. CoolSiC™ is again
a revolutionary, highly innovative technology specifically designed for reaching
new levels of performance in solar inverters,” said Jan-Willem Reynaerts,
Product Segment Head of High Voltage Power Conversion at Infineon Technologies.
“With Infineon’s new SiC JFET technology we enable our customers to further
shape the future of climate saving solutions.”
The new CoolSiC™ 1200V SiC JFETs have dramatically lower switching losses
compared to IGBTs, which allow higher switching frequencies to be used without
sacrificing overall system efficiency. This enables the use of much smaller
passive components, which result in smaller overall solution size, lower weight
and reduced system cost. Alternatively, a higher output power solution can be
realized within the same inverter housing.
In order to ensure that the normally-on JFET technology is safe and easy to use,
Infineon has developed a concept which is called Direct Drive Technology. In
this concept, the JFET is combined with an external Low Voltage MOSFET and a
dedicated Driver IC which ensures safe system start-up conditions as well as
fast and controlled switching.
The CoolSiC™ JFET features a monolithically integrated body diode that has a
switching performance comparable to an external SiC Schottky barrier diode. This
combination offers the utmost in efficiency, reliability, safety and ease of
Availability and Pricing
Samples of the CoolSiC™ JFET products as well as the Driver ICs are available in
the second quarter of 2012. First OEM ramp-ups are expected in the first half of
2013. Pricing for IJW120R100T1 (100mOhm) will be US$ 24.90 (€ 18.44) per piece
(1,000 pieces quantity).
Further information on Infineon’s new CoolSiC™ 1200V SiC JFET family is